A Sharp Estimate of Entropy Solution to Euler-Poisson System for Semiconductors in the Whole Domain

Yanqiu Cheng

Department of Mathematics, Shandong Normal University, Jinan, China.

Xixi Fang

Department of Mathematics, Shandong Normal University, Jinan, China.

Huimin Yu *

Department of Mathematics, Shandong Normal University, Jinan, China.

*Author to whom correspondence should be addressed.


Abstract

In this paper, we are concerned with the global existence, large time behavior, and timeincreasing-rate of entropy solutions to the one-dimensional unipolar hydrodynamic model for semiconductors in the form of Euler-Poisson equations. When the adiabatic index γ > 2, the L∞ estimates of artificial viscosity approximate solutions are obtained by using entropy inequality and maximum principle. Then the L∞ compensated compactness framework demonstrates the
convergence of approximate solutions. Finally, the global entropy solutions are proved to decay exponentially fast to the stationary solution, without any assumption on the smallness of initial data and doping profile.

Keywords: Global entropy solutions, Large time behavior, Entropy inequality, Maximum principle, Compactness framework


How to Cite

Cheng, Yanqiu, Xixi Fang, and Huimin Yu. 2019. “A Sharp Estimate of Entropy Solution to Euler-Poisson System for Semiconductors in the Whole Domain”. Journal of Advances in Mathematics and Computer Science 32 (2):1-12. https://doi.org/10.9734/jamcs/2019/v32i230140.

Downloads

Download data is not yet available.